丝印：33N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.6 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：33N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.47 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：33N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：488.68 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

33A, 250V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 33N25 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC 33N25 is suitable for high voltage synchronous rectifier and DC/DC converters, etc. ■ FEATURES

文件：181.24 Kbytes 页数：5 Pages

UTC

友顺

33A, 250V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 33N25 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC 33N25 is suitable for high voltage synchronous rectifier and DC/DC converters, etc. ■ FEATURES

文件：181.24 Kbytes 页数：5 Pages

UTC

友顺

33A, 250V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 33N25 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC 33N25 is suitable for high voltage synchronous rectifier and DC/DC converters, etc. ■ FEATURES

文件：181.24 Kbytes 页数：5 Pages

UTC

友顺

Fast Switching

文件：67.44 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：245.5 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：245.5 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：33N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =33A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

文件：172.8 Kbytes 页数：8 Pages

RECTRON

丽正国际