4 Megabit (512K x 8-Bit) CMOS SRAM

DESCRIPTION: Maxwell Technologies’ 33C408 high-density 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened RAD-PAK® packaging technology, the 33C408 realizes a high density, high performance, and

文件：241.17 Kbytes 页数：12 Pages

Maxwell

4 Megabit (512K x 8-Bit) CMOS SRAM

DESCRIPTION: Maxwell Technologies’ 33C408 high-density 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened RAD-PAK® packaging technology, the 33C408 realizes a high density, high performance, and

文件：241.17 Kbytes 页数：12 Pages

Maxwell

4 Megabit (512K x 8-Bit) CMOS SRAM

DESCRIPTION: Maxwell Technologies’ 33C408 high-density 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened RAD-PAK® packaging technology, the 33C408 realizes a high density, high performance, and

文件：241.17 Kbytes 页数：12 Pages

Maxwell

4 Megabit (512K x 8-Bit) CMOS SRAM

DESCRIPTION: Maxwell Technologies’ 33C408 high-density 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened RAD-PAK® packaging technology, the 33C408 realizes a high density, high performance, and

文件：241.17 Kbytes 页数：12 Pages

Maxwell

N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：860 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：33CQ；1.5SMC-Q Transient Voltage Suppressor Diode Series

Features ■ Surface Mount SMC package ■ Breakdown Voltage: 6.8 to 130 volts ■ Power Dissipation: 1500 watts ■ RoHS compliant* and halogen free** ■ AEC-Q101 compliant*** Applications ■ Protection of power buses ■ Protection of I/O interfaces ■ Overvoltage transient protection ■ Telecom,

文件：205.03 Kbytes 页数：6 Pages

Bourns

伯恩斯

丝印：33CA；Package：DO-214AA；SMD Transient Voltage Suppressor

Features - Glass passivated chip. - Low leakage. - Built-in strain relief. - Low inductance. - 3000W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycles): 0.01%. - Excellent clamping capability. - High temperature soldering: 260°C/40 seconds at terminal

文件：490.52 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：33CA；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：33CL；Package：SOD-123；3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glass passivated chip 400W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. Meet AEC-Q101 requirement

文件：3.27335 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：33CN10N；Package：PG-TO252-3；N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：860 Kbytes 页数：12 Pages

Infineon

英飞凌