N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：860 Kbytes 页数：12 Pages

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英飞凌

丝印：33CN10N；Package：PG-TO252-3；N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：860 Kbytes 页数：12 Pages

INFINEON

英飞凌

N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：860 Kbytes 页数：12 Pages

INFINEON

英飞凌

OptiMOS짰2 Power-Transistor

文件：708.85 Kbytes 页数：13 Pages

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英飞凌

OptiMOS짰2 Power-Transistor

文件：708.85 Kbytes 页数：13 Pages

INFINEON

英飞凌