Fast Switching

文件：64.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

文件：982.72 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

电源管理类

FM

富满

丝印：30N100；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

文件：362.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：30N100；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Halogen-free RDS(ON)

文件：727.27 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：30N10F7；Package：TO-220；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features  Among the lowest RDS(o

文件：1.05035 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：30N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：318.35 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：30N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：332.83 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：30N10F7；Package：DPAK；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a DPAK package

文件：1.06865 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体