丝印：30N03JDF；Package：PDFN3x3-8L；N-Channel Enhancement Mode Field Effect Transistor

General Description ● Trench Power LV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● High current load applications ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply

文件：1.14571 Mbytes 页数：6 Pages

WPMTEK

维攀科技