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30N03A

Marking:30N03A;Package:TO-252;30V N-Channel Power

Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

30N03A

Marking:30N03A;Package:TO-252;30V N-Channel Power

GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowon

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

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