MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

文件：215.04 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m

文件：215.04 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ

文件：404.23 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive.

文件：60.67 Kbytes 页数：5 Pages

SANYO

三洋

General-Purpose Switching Device Applications

Features • Low ON-resistance. • Motor drive. • Avalanche resistance guarantee. • 10V drive.

文件：281.95 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee. • For use of lighting & etc. • High-density mounting.

文件：61.1 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee. • For use of lighting.

文件：61.09 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee. • For use of lighting.

文件：60.4 Kbytes 页数：4 Pages

SANYO

三洋

SILICON N CHANNEL MPS TYPE (7T-MOS)

HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Brakdwon Voltage : V(br)dss=450V . High Forward Transfer Admittance : |Yf s |=1.2S (Typ.) . Low Leakage Current : lGSS=:t100nA(Max. ) @ Vgs=±20V lDSS=lmA(Max

文件：48.73 Kbytes 页数：1 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：323.82 Kbytes 页数：2 Pages

ISC

无锡固电