MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK4071 is the best switching element for the DC-DC converter usage to 24 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usage. FEATURES

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK4071 is the best switching element for the DC-DC converter usage to 24 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usage. FEATURES

文件：309.39 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK4071 is the best switching element for the DC-DC converter usage to 24 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usage. FEATURES

文件：309.39 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF T

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SWITCHING N-CHANNEL POWER MOS FET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075B is N-channel MOS FET designed for high current switching applications. FEATURES •Low on-state resistance RDS(on)1= 7.9 mΩMAX. (VGS= 10 V, ID= 25 A) RDS(on)2= 10 mΩMAX. (VGS= 4.5 V, ID= 13 A) •Low Ciss: Ciss= 2230

文件：290.09 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOS FET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075B is N-channel MOS FET designed for high current switching applications. FEATURES •Low on-state resistance RDS(on)1= 7.9 mΩMAX. (VGS= 10 V, ID= 25 A) RDS(on)2= 10 mΩMAX. (VGS= 4.5 V, ID= 13 A) •Low Ciss: Ciss= 2230

文件：290.09 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOS FET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075B is N-channel MOS FET designed for high current switching applications. FEATURES •Low on-state resistance RDS(on)1= 7.9 mΩMAX. (VGS= 10 V, ID= 25 A) RDS(on)2= 10 mΩMAX. (VGS= 4.5 V, ID= 13 A) •Low Ciss: Ciss= 2230

文件：290.09 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF T

文件：357.09 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF T

文件：357.09 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 1200 pF TYP

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