MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 1200 pF TYP

文件：327.12 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 1200 pF TYP

文件：327.12 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 35 mΩ MAX. (VGS = 4.5 V, ID = 5 A) • Low inpu

文件：356.99 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 35 mΩ MAX. (VGS = 4.5 V, ID = 5 A) • Low inpu

文件：356.99 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 35 mΩ MAX. (VGS = 4.5 V, ID = 5 A) • Low inpu

文件：356.99 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low input capacitance Ciss = 2300 pF TYP.

文件：366.76 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low input capacitance Ciss = 2300 pF TYP.

文件：366.76 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low input capacitance Ciss = 2300 pF TYP.

文件：366.76 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

文件：330.88 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：398.74 Kbytes 页数：2 Pages

ISC

无锡固电