MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)

文件：273.6 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)

文件：219.39 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)

文件：219.39 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)

文件：273.6 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)

文件：273.6 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)

文件：273.6 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)

文件：219.39 Kbytes 页数：8 Pages

NEC

瑞萨

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08693 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)

文件：219.39 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)

文件：273.6 Kbytes 页数：10 Pages

RENESAS

瑞萨