DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：31.05 Kbytes 页数：4 Pages

SANYO

三洋

DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • 4V drive.

文件：32.159 Kbytes 页数：4 Pages

SANYO

三洋

DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • 4V drive.

文件：32.21 Kbytes 页数：4 Pages

SANYO

三洋

DC / DC Converter, Motor Driver Applications

Features • Low ON-resistance. • 4V drive.

文件：31.97 Kbytes 页数：4 Pages

SANYO

三洋

2SK3416

DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switcing. • 4V drive.

文件：56.92 Kbytes 页数：4 Pages

SANYO

三洋

Switching Regulator Applications

Switching Regulator Applications • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enha

文件：245.76 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

2SK3418

FEATURES • Low on-resistance RDS (on) = 4.3mΩ typ. • Low voltage drive (4V drive) • The switching speed is fast.

文件：61.8 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching

文件：116.69 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching

文件：116.69 Kbytes 页数：8 Pages

RENESAS

瑞萨