MOS Field Effect Transistor

MOS Field Effect Transistor Features 4.5-V drive available Low on-state resistance RDS(on)1=9.0m MAX. (VGS=10V,ID=24A) Low gate charge QG= 34 nC TYP. (ID=48A,VDD= 16V, VGS=10V) Built-in gate protection diode Surface mount device available

文件：45.13 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

文件：576.22 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5-V drive available • Low on-state

文件：1.38636 Mbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

文件：576.22 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5-V drive available • Low on-state

文件：1.38636 Mbytes 页数：8 Pages

NEC

瑞萨

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10616 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4.0 V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. FEATURES • Can

文件：198.9 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4-V power source. ​​​​​​​The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. FEATURES •

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NEC

瑞萨

DC / DC Converter Applications

• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：31.97 Kbytes 页数：4 Pages

SANYO

三洋