N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±3

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NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX.

文件：77.11 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat

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MOS Field Effect Transistor

Features Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available

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KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat

文件：409.95 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX.

文件：77.11 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX.

文件：77.11 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat

文件：409.95 Kbytes 页数：10 Pages

RENESAS

瑞萨