SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)

HIGH SPEED POWER SWITCHING Complementary pair with 2SJ117

文件：49.56 Kbytes 页数：1 Pages

HitachiHitachi Semiconductor

日立日立公司

Fast Switching Speed

文件：65.57 Kbytes 页数：2 Pages

ISC

无锡固电

General-Purpose Switching Device Applications

Features • Low ON-resistance. • Low Qg. • Ultrahigh-Speed Switching Applications. • Avalanche resistance guarantee.

文件：49.42 Kbytes 页数：5 Pages

SANYO

三洋

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of

文件：62.16 Kbytes 页数：8 Pages

NEC

瑞萨

丝印：XA；Package：SC-96；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

文件：226.4 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.86886 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate cu

文件：50.76 Kbytes 页数：8 Pages

NEC

瑞萨

丝印：D1；Package：SC-75；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circui

文件：312.97 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

文件：98.64 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

文件：98.64 Kbytes 页数：8 Pages

RENESAS

瑞萨