2SK2940STL-E技术资料参数供应商报价瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK2940STL-E	文件：128.13 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：128.13 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK2940L	文件：55.32 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：55.32 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2940L-E	文件：128.13 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：128.13 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK2940S	文件：55.32 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：55.32 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

更多2SK2940STL-E供应商更新时间2026-4-18 11:01:00