2SK2930规格书应用电路供应价格瑞萨RENESAS-114ic电子网

首页 >2SK293>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
2SK2930	文件：53.14 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS=0.020Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK2930	文件：87.82 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS=0.020Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2930-E	文件：87.82 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS=0.020Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2931	文件：52.59 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.010Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK2931	文件：87.62 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.010Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2931-E	文件：87.62 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.010Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2932	文件：50.8 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.055Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK2932	文件：87.3 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.055Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2932-E	文件：87.3 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.055Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2933	文件：51.56 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.040Ωtyp. •4Vgatedrivedevices. •Highspeedswitching	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK2933	文件：87.83 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.040Ωtyp. •4Vgatedrivedevices. •Highspeedswitching	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2933-E	文件：87.83 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.040Ωtyp. •4Vgatedrivedevices. •Highspeedswitching	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2934	文件：51.16 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.026Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK2934	文件：87.16 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.026Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2934-E	文件：87.16 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.026Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2935	文件：51.71 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.020Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK2935	文件：121.46 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.020Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2935-E	文件：121.46 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.020Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2936	文件：51.32 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=0.010Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK2936	文件：121.4 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=0.010Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

12 3 >>>

详细参数

型号：
2SK293
制造商：
Renesas Electronics Corporation
功能描述：
Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Box

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	2SK2930	SANYO	08PB		30000		询价
深圳市恒创达实业有限公司	2SK2930	Renesas	17+	TO-220	6200		询价
深圳市振宏微科技有限公司	2SK2930	HIT	23+	TO-220	10000	专做原装正品,假一罚百!	询价
深圳市宏捷佳电子科技有限公司	2SK2930	RENESAS	23+	TO-TO-220	37650	全新原装真实库存含13点增值税票!	询价
深圳市新力诚科技有限公司	2SK2930	进口原厂	2020+	TO-220	20000	公司代理品牌,原装现货超低价清仓!	询价
中天科工半导体（深圳）有限公司	2SK2930	RENESAS	20+	TO-220	36900	原装优势主营型号-可开原型号增税票	询价
瀚佳科技(深圳)有限公司	2SK2930	HIT	2020+	TO-220AB	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市亿智腾科技有限公司	2SK2930	日立	2021+	TO-220	6430	原装现货/欢迎来电咨询	询价
艾睿国际（香港）有限公司	2SK2930	HITACHI/日立	2021+	TO-220	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市汇莱威科技有限公司	2SK2930	RENESAS/瑞萨		TO-220	265209	假一罚十原包原标签常备现货!	询价

更多2SK293供应商更新时间2024-6-13 16:30:00

详细参数

相关规格书

相关库存