Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：87.62 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：52.59 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：87.62 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-Channel 60-V (D-S) MOSFET

文件：1.27355 Mbytes 页数：7 Pages

VBSEMI

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