丝印：K2094；Package：SOT-428；Small switching (60V, 2A)

Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：127.41 Kbytes 页数：4 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.7 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOSFET

Features Low on-resistance Fast switching speed Low-voltage drive Easily designed drive circuits

文件：42.22 Kbytes 页数：1 Pages

KEXIN

科信电子

Small Switching

Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel.

文件：128.52 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings

文件：37.5 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings

文件：1.50943 Mbytes 页数：10 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

文件：82.8 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter. Application High speed power switching

文件：33.73 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

150V 0,08Ω 20A 50W > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：191.41 Kbytes 页数：2 Pages

FUJI

富士通