N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

文件：196.47 Kbytes 页数：3 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

文件：287.49 Kbytes 页数：4 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

文件：287.49 Kbytes 页数：4 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

文件：287.49 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications

文件：553.39 Kbytes 页数：4 Pages

TOSHIBA

东芝

JFET

The UTC 2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSSand low CRSS. The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications. High |Yfs|: |Yfs|=15mS (typ.) at VDS=10V, VGS=0High breakdown voltage: VGDS=−50VHigh input impedance: IGSS=−1nA (max) at VGS=−30V;

UTC

友顺

Junction FET (Surface mount type)

Application Scope：General-purpose\nPolarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Gate Current IG 10 mA \nGate-drain Voltage VGDS -50 V ;

Toshiba

东芝

丝印：G22；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and

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RENESAS

瑞萨

N-Channel MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

Impedance Converter Applications???

Impedance Converter Applications Features · Small IGSS. · Small Ciss. · Ultrasmall-sized package permitting 2SK2091-applied sets to be made smaller and slimmer. Applications · Low-frequency general-purpose amplifier applications. · Impedance conversion. · Infrared senso

文件：76.5 Kbytes 页数：3 Pages

SANYO

三洋