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2SK18

DIFFERENTIAL AMPLIFIER APPLICATIONS

Application MedicalElectronicEquipment VideoPre-Amplifier VHFBandAmplifier

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1807

Silicon N-Channel MOS FET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

2SK1807

Silicon N Channel MOS FET

*Lowon-resistance *Highspeedswitching *Lowdrivecurrent *Nosecondarybreakdown *Suitableforswitchingregulator,DC-DCconverter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK1807

Fast Switching Speed

DESCRIPTION ·DrainCurrentID=4A@TC=25℃ ·DrainSourceVoltage:VDSS=900V(Min) ·FastSwitchingSpeed APPLICATIONS ·HighBreakdownVoltage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK1807-E

Silicon N Channel MOS FET

*Lowon-resistance *Highspeedswitching *Lowdrivecurrent *Nosecondarybreakdown *Suitableforswitchingregulator,DC-DCconverter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK1808

Silicon N Channel MOS FET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK1808-E

Silicon N Channel MOS FET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK1809

Silicon N-Channel MOS FET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

2SK1809

Low on-resistance

DESCRIPTION •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage:VDSS=600V(Min) •FastSwitchingSpeed •Lowon-resistance •Forswitchinggregulator,DC-DCConverter APPLICATIONS •Highspeedpowerswitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK1809

Silicon N Channel MOS FET

Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK1813

High-Speed Switching Applications

Features ·LowONresistance. ·Ultrahigh-speedswitching. ·Converters.

SANYOSanyo

三洋三洋电机株式会社

2SK1815

N-CHANNEL SILICON POWER MOS-FET

Features Highcurrent Lowno-resistance Nosecondarybreakdown Lowdrivingpower HighforwardTransconductance Appllcations Motorcontrollers Genaralpurposepoweramplifier DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

2SK1817

N-channel MOS-FET

>Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

2SK1817-M

N-channel MOS-FET

>Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

2SK1818

N-CHANNEL ENHANCEMENT TYPE MOSFET

Features ●Includefastrecoverydiode ●Highvoltage ●Lowdrivingpower Applications ●Motorcontrollers ●Inverters ●Choppors

FujiFUJI CORPORATION

株式会社FUJI

2SK1818-MR

N-CHANNEL ENHANCEMENT TYPE MOSFET

Features ●Includefastrecoverydiode ●Highvoltage ●Lowdrivingpower Applications ●Motorcontrollers ●Inverters ●Choppors

FujiFUJI CORPORATION

株式会社FUJI

2SK1819-01MR

N-CHANNEL ENHANCEMENT TYPE MOSFET

Features ●Includefastrecoverydiode ●Highvoltage ●Lowdrivingpower ●Avalanche-proof Applications ●Motorcontrollers ●Converters ●Choopors

FujiFUJI CORPORATION

株式会社FUJI

2SK1821-01M

N-channel MOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社FUJI

2SK1821-01MR

N-channel MOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社FUJI

2SK1822-01M

N-channel MOS-FET

>Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance -AvalancheProof -IncludingG-SZener-Diode >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCConverters

FujiFUJI CORPORATION

株式会社FUJI

详细参数

  • 型号:

    2SK18

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    900V NCHANEL MOSFET

供应商型号品牌批号封装库存备注价格
TOSHIBA
16+
CAN6
2500
原装现货假一罚十
询价
TOS
23+
CAN7
9365
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
TOSHIBA
24+
SOT23
6980
原装现货,可开13%税票
询价
TOSHIBA/东芝
专业铁帽
CAN6
2500
原装铁帽专营,代理渠道量大可订货
询价
TOSHIBA/东芝
专业铁帽
CAN6
67500
铁帽原装主营-可开原型号增税票
询价
TOS
1922+
CAN7
3000
绝对进口原装现货
询价
T/NEC
2023+
CAN
50000
全新原装现货
询价
FUJ
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
VB
2019
TO-220F
55000
绝对原装正品假一罚十!
询价
TOSHIBA
22+
SOT323
360000
进口原装房间现货实库实数
询价
更多2SK18供应商 更新时间2024-6-23 8:00:00