Silicon N Channel MOS FET

* Low on-resistance * High speed switching * Low drive current * No secondary breakdown * Suitable for switchingregulator, DC-DC converter

文件：82.41 Kbytes 页数：7 Pages

RENESAS

瑞萨

Fast Switching Speed

DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·High Breakdown Voltage

文件：64.7 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

* Low on-resistance * High speed switching * Low drive current * No secondary breakdown * Suitable for switchingregulator, DC-DC converter

文件：82.41 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

文件：32.82 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

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