N-channel MOS-FET

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Applications Motor Control General Purpose Power Amplifier DC-DC converters

文件：214.85 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

FUJI

富士通

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

文件：641.31 Kbytes 页数：5 Pages

Bychip

百域芯

N-channel MOS-FET

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Applications Motor Control General Purpose Power Amplifier DC-DC converters

文件：214.85 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Applications Motor Control General Purpose Power Amplifier DC-DC converters

文件：214.85 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Applications Motor Control General Purpose Power Amplifier DC-DC converters

文件：214.85 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：308.93 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.95 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.00217 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件：1.00212 Mbytes 页数：8 Pages

VBSEMI

微碧半导体