N-CHANNEL SILICON POWER MOS-FET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche - proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：177.13 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche - proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：138.55 Kbytes 页数：4 Pages

Fuji

富士通

POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：1.34978 Mbytes 页数：16 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET?

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：137.04 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET?

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：137.69 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOS-FET

[Fuji] Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：57.39 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Fast Switching Speed

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=800V(Min) • Fast Switching Speed APPLICATIONS • high voltage, high speed power switching

文件：66.8 Kbytes 页数：2 Pages

ISC

无锡固电

N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

文件：123.57 Kbytes 页数：2 Pages

TOSHIBA

东芝

SILICON N CHANNEL POWER F MOSFET

Features ● Low ON resistance RDS(on) : RDS(0n) = 0.2Ω (typ.) ● High switching rate : td = 100ns (typ.) ● No secondary breakdown ● Low voltage drive is possible (VGS = 4V). Application ● DC-DC converter ● No contact relay ● Solenoid drive ● Motor drive

文件：66.46 Kbytes 页数：1 Pages

Panasonic

松下

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.06 Kbytes 页数：2 Pages

ISC

无锡固电