Silicon N-Channel Junction FET

Silicon N-channel junction FET For low-frequency and low-noise amplification ■ Features • High mutual conductance gm • Low noise type • SMini type package, allowing downsizing of the sets and auto matic insertion through the tape/magazine packing

文件：84.71 Kbytes 页数：3 Pages

Panasonic

松下

For Low-Frequency Amplification

Silicon N-Channel Junction FET For low-frequency amplification For switching ■ Features ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

文件：73.39 Kbytes 页数：3 Pages

Panasonic

松下

For Switching

Silicon MOS FETs (Small Signal) For switching ■ Features ● High-speed switching ● S-mini type package, allowing downsizing of the sets and auto matic insertion through the tape/magazine packing.

文件：76.12 Kbytes 页数：3 Pages

Panasonic

松下

Silicon MOS FETs

Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

文件：79.46 Kbytes 页数：3 Pages

Panasonic

松下

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：39.83 Kbytes 页数：2 Pages

NEC

瑞萨

N-CHANNEL SILICON POWER MOSFET

Features ● High Speed Switching ● Low on-resistance ● No Secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalance-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：127.79 Kbytes 页数：4 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.0A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features ● High Speed Switching ● Low on-resistance ● No Secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalance-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：127.79 Kbytes 页数：4 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.0A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

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文件：128.669 Kbytes 页数：4 Pages

Fuji

富士通