P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −100 V) • Enhancement mode: Vth= −

文件：282.67 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Relay Drive, DC-DC Converter and Motor Drive Applications

Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −100 V) • Enhancement mode: Vth= −

文件：228.99 Kbytes 页数：6 Pages

TOSHIBA

东芝

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

文件：94.64 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive.

文件：87.42 Kbytes 页数：3 Pages

SANYO

三洋

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive.

文件：93.86 Kbytes 页数：3 Pages

SANYO

三洋

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：38.07 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

文件：71.69 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

文件：71.69 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件：88.41 Kbytes 页数：8 Pages

RENESAS

瑞萨