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2SJ220

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

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文件:171.9 Kbytes 页数:1 Pages

HitachiHitachi Semiconductor

日立日立公司

2SJ220L

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:171.9 Kbytes 页数:1 Pages

HitachiHitachi Semiconductor

日立日立公司

2SJ220S

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:171.9 Kbytes 页数:1 Pages

HitachiHitachi Semiconductor

日立日立公司

2SJ221

Silicon P-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件:48.48 Kbytes 页数:8 Pages

HitachiHitachi Semiconductor

日立日立公司

2SJ221

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件:81.55 Kbytes 页数:7 Pages

RENESAS

瑞萨

2SJ221-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件:81.55 Kbytes 页数:7 Pages

RENESAS

瑞萨

2SJ222

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件:82.29 Kbytes 页数:7 Pages

RENESAS

瑞萨

2SJ222

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件:34.22 Kbytes 页数:6 Pages

HitachiHitachi Semiconductor

日立日立公司

2SJ222-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件:82.29 Kbytes 页数:7 Pages

RENESAS

瑞萨

2SJ225

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Meets radial taping.

文件:82.13 Kbytes 页数:3 Pages

SANYO

三洋

详细参数

  • 型号:

    2SJ22

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    Silicon P Channel MOS FET

供应商型号品牌批号封装库存备注价格
日立
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
24+
2000
询价
HIT
24+
TO-220F
5000
只做原装公司现货
询价
HIT
23+
PCS
8650
受权代理!全新原装现货特价热卖!
询价
HIT
23+
TO-220F
3000
专做原装正品,假一罚百!
询价
HITACHI/日立
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
RENESAS/瑞萨
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
NEC
2022+
TO-220FM
12888
原厂代理 终端免费提供样品
询价
HITACHI/日立
23+
TO-220
43330
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
日立
22+
TO-220F
8000
原装正品支持实单
询价
更多2SJ22供应商 更新时间2025-12-25 11:04:00