Silicon NPN Darlington Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 15A) APPLICATIONS · Designed for use in general purpose power amplifier and switching applications

文件：292.7 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Base Breakdown Voltage-: V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications.

文件：248.76 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR (NPN)

FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) Complements to 2SB1132

文件：755.08 Kbytes 页数：3 Pages

HTSEMI

金誉半导体

MEDIUM POWER NPN TRANSISTOR

MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.

文件：188.38 Kbytes 页数：3 Pages

UTC

友顺

NPN Epitaxial Planar Transistors

Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)

文件：278.75 Kbytes 页数：5 Pages

WEITRON

丝印：DAP；Package：SOT-89；Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237

文件：118.61 Kbytes 页数：3 Pages

ROHM

罗姆

Medium Power Transistor

Features Low VCE(sat) Compliments to 2SB1132

文件：365.37 Kbytes 页数：3 Pages

KEXIN

科信电子

NPN Silicon General Purpose Transistor

Features Power dissipation PCM : 0.5 W (Tamb= 25oC) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O

文件：118.74 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：DAP；Package：SOT-89；Medium Power Transistor(32V,1A)

FEATURES Low saturation voltage:VCE(sat)=0.15V(typ.) (IC/iB=500mA/50mA) PC=0.5W Complement the 2SB1132. APPLICATIONS NPN silicon transistor.

文件：496.35 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.65 Kbytes 页数：1 Pages

WINNERJOIN

永而佳