isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS • For low speed high current switching industrial use.

文件：256.029 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·High reliability ·Fast speed APPLICATIONS ·For TV horizontal output applications

文件：143.21 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·High reliability ·Fast speed APPLICATIONS ·For TV horizontal output applications

文件：130.18 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain-hFE= 750(Min)@ IC= 15A • High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose amplifier and low speed s

文件：262.63 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon Epitaxial Darlington Transistor Low Speed High Current Switching Industrial Use

文件：36.13 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

文件：34.43 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Darlington Power Transistor

文件：265.93 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN with Internal Resistance

文件：28.19 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

文件：144.82 Kbytes 页数：3 Pages

SAVANTIC

NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

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