isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ IC= 1A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.

文件：188.96 Kbytes 页数：2 Pages

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isc Silicon NPN Power Transistor

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Silicon NPN Power Transistors

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Pulse Motor Drive, Hammer Drive Applications

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Micro-Motor Drive, Hammer Drive Applications

文件：162.41 Kbytes 页数：5 Pages

TOSHIBA

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Micro-Motor Drive, Hammer Drive Applications

文件：162.41 Kbytes 页数：5 Pages

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Power transistor for low frequency applications

Feature：Darlington / Built-in damper diode\nPolarity：NPN\nComplementary Product：2SB1067\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 2 A \nCollector-emitter voltage VCEO 80 V ;

Toshiba

东芝

Silicon NPN Epitaxial

HITACHI

日立