DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applicat

文件：37.51 Kbytes 页数：5 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：256.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：237.15 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：256.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：237.15 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.)

文件：182.2 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE= 400 to 1000 (IC= 0.5 A) • Low collector-emitter saturation voltage: VCE (sat)= 0.15 V (max) • High-speed switching: tf= 50 ns (typ.)

文件：159.27 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：2C；Package：PW-Mini；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝