0.02A , 30V NPN Plastic Encapsulated Transistor

FEATURE • RF amplifier • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：704.06 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：5345；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High current transition frequency ● Low output capacitance:Cob=1.4pF ● Low base time constant and high gain ● Excellent noise response APPLICATIONS ● General small signal amplifier

文件：1.06257 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：5345；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response

文件：1.21654 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：C5345；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Transition Frequency Low Output Capacitance Low Base Time Constant and High Gain Excellent Noise Response APPLICATIONS RF Amplifier

文件：1.81289 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES ● RF amplifier ● High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] ● Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] ● Low base time constant and high gain ● Excellent noise response

文件：257.279 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High transition frequency, low output capacitance. Applications RF amplifier applications.

文件：898.19 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Transition Frequency Low Output Capacitance Low Base Time Constant and High Gain Excellent Noise Response APPLICATIONS RF Amplifier

文件：1.81289 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：235.85 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：225.98 Kbytes 页数：4 Pages

AUK

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：235.85 Kbytes 页数：4 Pages

KODENSHI

可天士