RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：204.63 Kbytes 页数：5 Pages

KODENSHI

可天士

NPN Silicon Transistor

Description • RF amplifier Features • High transition frequency : fT=550MHz(Typ.) @[VCE=6V, IC=1mA] • Low output capacitance : Cob=1.4pF (Typ.) @[VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：264.08 Kbytes 页数：4 Pages

AUK

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：115.63 Kbytes 页数：4 Pages

AUK

RF amplifier

Description • RF amplifier ​​​​​​​ Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：313.79 Kbytes 页数：5 Pages

KODENSHI

可天士

丝印：C5345；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Transition Frequency Low Output Capacitance Low Base Time Constant and High Gain Excellent Noise Response APPLICATIONS RF Amplifier

文件：1.81289 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：253.57 Kbytes 页数：5 Pages

KODENSHI

可天士

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

文件：238.83 Kbytes 页数：4 Pages

AUK

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC5346 ■ Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. ● High collector to emitter voltage VCEO. ● Small collector output capacitan

文件：37.34 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

■ Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob.

文件：36.98 Kbytes 页数：2 Pages

PANASONIC

松下

High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications?

High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications Features ● High frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). : |S21e|2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz).

文件：132.22 Kbytes 页数：4 Pages

SANYO

三洋