Silicon NPN Triple Diffused

Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A • Suitable for large size CRT Display Application Character Display Horizontal Deflection Output

文件：20.82 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

文件：55.8 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Medium Power Amplifier Applications

文件：94.49 Kbytes 页数：3 Pages

TOSHIBA

东芝

Medium Power Amplifier Applications

文件：94.49 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN SILICON EPITAXIAL TRANSISTOR

文件：257.45 Kbytes 页数：7 Pages

RENESAS

瑞萨

BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS

文件：67.72 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

文件：273.65 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS

Toshiba

东芝

Silicon NPN epitaxial planer type(For high speed switching)

Panasonic

松下

Transistor

Renesas

瑞萨