Silicon NPN Triple Diffused

Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A • Suitable for large size CRT Display Application Character Display Horizontal Deflection Output

文件：20.82 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

文件：55.8 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

文件：273.65 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

• High speed switching time: 0.5 µs max\n• High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A\n• Suitable for large size CRT DisplayApplication\nCharacter Display Horizontal Deflection Output\n ;

HITACHI

日立