Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

文件：46.8 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

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Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

文件：176.15 Kbytes 页数：8 Pages

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瑞萨

High Gain-Bandwidth Product

DESCRIPTION • High Gain-Bandwidth Product fT= 4.4 GHz TYP. • High Output Power 1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz APPLICATIONS • Designed for VHF ~ UHF wide band amplifier applications.

文件：212.22 Kbytes 页数：5 Pages

ISC

无锡固电

Transistor-Small Signal Bip-TRSs for High Frequency Amplifier

Renesas

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier

文件：176.15 Kbytes 页数：8 Pages

RENESAS

瑞萨