2SC4807ERTR-E规格书供应代理瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SC4807ERTR-E	文件：176.15 Kbytes Page：8 Pages	Silicon NPN Epitaxial Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier 文件：176.15 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SC4807	文件：212.22 Kbytes Page：5 Pages	High Gain-Bandwidth Product DESCRIPTION • High Gain-Bandwidth Product fT= 4.4 GHz TYP. • High Output Power 1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz APPLICATIONS • Designed for VHF ~ UHF wide band amplifier applications. 文件：212.22 Kbytes 页数：5 Pages	ISC 无锡固电	ISC
2SC4807	文件：176.15 Kbytes Page：8 Pages	Silicon NPN Epitaxial Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier 文件：176.15 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SC4807	文件：46.8 Kbytes Page：8 Pages	Silicon NPN Epitaxial Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Application VHF / UHF wide band amplifier 文件：46.8 Kbytes 页数：8 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

更多2SC4807ERTR-E供应商更新时间2026-1-19 17:40:00