Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：70.37 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837

文件：147.85 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR ■ FEATURES * High transition frequency * Power amplifier applications * Driver stage amplifier applications

文件：46.52 Kbytes 页数：4 Pages

UTC

友顺

NPN Silicon Power Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Complementary to 2SA1837

文件：598.95 Kbytes 页数：3 Pages

MCC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

文件：166.68 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

文件：44.32 Kbytes 页数：3 Pages

JMNIC

锦美电子

Power Amplifier Applications

FEATURES • High collector voltage˖ VCEO=230V (min) • Complementary to 2SA1937 • High transition frequency :fT=100MHz(Typ.) • RoHS product APPLICATIONS • Power Amplifier Applications

文件：219.53 Kbytes 页数：4 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SA1837 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

文件：122.33 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

文件：246.06 Kbytes 页数：4 Pages

SAVANTIC