NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

文件：347.32 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power Bipolar Transistors

文件：55.8 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 8.5dB (f = 2 GHz)

文件：344.41 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 14dB (f = 1 GHz)

文件：352.11 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 15.5dB (f = 1 GHz)

文件：344.33 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)

文件：338.76 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

文件：69.12 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for power amplifier and general purpose applications.

文件：251.08 Kbytes 页数：2 Pages

ISC

无锡固电