Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：47.34 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

文件：86.49 Kbytes 页数：8 Pages

RENESAS

瑞萨

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 9 GHz TYP. • High gain, low noise figure PG = 13.0 dB TYP., NF = 1.2 dB TYP. @ f = 900 MHz APPLICATIONS • Designed for VHF, UHF wide band amplifier.

文件：180.89 Kbytes 页数：5 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

文件：46.82 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN RF Transistor

DESCRIPTION • High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V， IC=20mA， f=0.9GHz • High gain, low noise figure ︱ S21e︱ 2 = 13.5 dB @ VCE=5V， IC=20mA， f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V， IC=5mA， f=0.9GHz • Minimum Lot-to-Lot variations for robust device performance and rel

文件：285.81 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

文件：86.49 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

文件：25.13 Kbytes 页数：1 Pages

SANKEN

三垦

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

文件：112.1 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

文件：243.85 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications

文件：241.67 Kbytes 页数：4 Pages

SAVANTIC