Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

文件：46.82 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

文件：86.49 Kbytes 页数：8 Pages

RENESAS

瑞萨

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 9 GHz TYP. • High gain, low noise figure PG = 13.0 dB TYP., NF = 1.2 dB TYP. @ f = 900 MHz APPLICATIONS • Designed for VHF, UHF wide band amplifier.

文件：180.89 Kbytes 页数：5 Pages

ISC

无锡固电

NPN SILICON RF TRANSISTOR

文件：629.45 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：YK；Package：SOT-323；NPN Transistor

文件：611.43 Kbytes 页数：6 Pages

YFWDIODE

佑风微

三极管

AK

安捷利

双极晶体管

BlueRocket

蓝箭电子

高频三极管

MXTronics

时代民芯

Silicon NPN RF Transistor

DESCRIPTION • High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V， IC=20mA， f=0.9GHz • High gain, low noise figure ︱ S21e︱ 2 = 13.5 dB @ VCE=5V， IC=20mA， f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V， IC=5mA， f=0.9GHz • Minimum Lot-to-Lot variations for robust device performance and rel

文件：285.81 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

文件：86.49 Kbytes 页数：8 Pages

RENESAS

瑞萨