Silicon NPN Triple Diffused

Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM Application TV / character display horizontal deflection output

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HITACHIHitachi Semiconductor

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Power Bipolar Transistors

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isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : V(BR)CBO= 1700V(Min) • High Switching Speed • High Reliability • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Ultrahigh-definition color display horizontal deflection output

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ISC

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Silicon NPN Triple Diffused

HITACHI

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