NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 mA)

文件：92.28 Kbytes 页数：1 Pages

TOSHIBA

东芝

Silicon NPN epitaxial planer type(For high speed switching)

Silicon NPN epitaxial planer type For high speed switching ■ Features ● High-speed switching. ● Low collector to emitter saturation voltage VCE(sat). ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：42.81 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Epitaxial Planar Type

Features ● High-speed switching. ● Low collector to emitter saturation voltage VCE(sat). ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：45.23 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4783 is NPN silicon epitaxial transistor. FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V • Can be automatically mounted

文件：256.85 Kbytes 页数：7 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4783 is NPN silicon epitaxial transistor. FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V • Can be automatically mounted

文件：37.5 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：69.71 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：220.13 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：220.13 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

文件：105.76 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN epitaxial planer type(For intermediate frequency amplification)

Features ● High transition frequency fT. ● Satisfactory linearity of forward current transfer ratio hFE. ● Allowing supply with the radial taping

文件：40.12 Kbytes 页数：2 Pages

PANASONIC

松下