丝印：B649；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A

文件：1.04176 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A

文件：306.37 Kbytes 页数：3 Pages

KOOCHIN

灏展电子

Silicon PNP transistor in a TO-126 Plastic Package.

Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features Complementary pair with 2SD669(A). Applications Low frequency power amplifier.

文件：1.00971 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Epitaxial

Application Low frequency power amplifier complementary pair with 2SD669/A

文件：35.81 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

文件：77.47 Kbytes 页数：4 Pages

UTC

友顺

PNP Epitaxial Planar Transistors

PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free

文件：272.58 Kbytes 页数：5 Pages

WEITRON

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power amplifier applications

文件：4.21523 Mbytes 页数：3 Pages

JIANGSU

长电科技

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications

文件：205.19 Kbytes 页数：4 Pages

JMNIC

锦美电子

PNP Silicon Transistor

Features ● Collector-Emitter Voltage :-160V ● Collector Current :-1.5A

文件：73.73 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications

文件：148.44 Kbytes 页数：4 Pages

SAVANTIC