Silicon PNP Epitaxial

Application Low frequency power amplifier complementary pair with 2SD669/A

文件：35.81 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

文件：77.47 Kbytes 页数：4 Pages

UTC

友顺

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power amplifier applications

文件：4.21523 Mbytes 页数：3 Pages

JIANGSU

长电科技

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications

文件：205.19 Kbytes 页数：4 Pages

JMNIC

锦美电子

PNP Silicon Transistor

Features ● Collector-Emitter Voltage :-160V ● Collector Current :-1.5A

文件：73.73 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications

文件：148.44 Kbytes 页数：4 Pages

SAVANTIC

PNP Epitaxial Planar Transistors

PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free

文件：272.58 Kbytes 页数：5 Pages

WEITRON

PNP Type Plastic Encapsulate Transistors

FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC

文件：258.25 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：B649A；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A

文件：1.04176 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A

文件：306.37 Kbytes 页数：3 Pages

KOOCHIN

灏展电子