Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) • High Power Dissipation- : Pc= 150W(Max)@Tc=25°C • Complement to Type 2SD665 APPLICATIONS • Designed for power amplifier applications. • Recommended for 200W high-fidelity audio frequency amplifier output stage.

文件：129.31 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications

文件：112.68 Kbytes 页数：3 Pages

SAVANTIC

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

文件：344.34 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

日立日立公司

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

文件：344.34 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SD667/A

文件：33.01 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

丝印：B647XXX；Package：TO-92MOD；TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

文件：970.74 Kbytes 页数：5 Pages

DGNJDZ

南晶电子

Silicon PNP Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SD667/A

文件：33.01 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

文件：970.74 Kbytes 页数：5 Pages

DGNJDZ

南晶电子

TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

文件：970.74 Kbytes 页数：5 Pages

DGNJDZ

南晶电子

TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

文件：970.74 Kbytes 页数：5 Pages

DGNJDZ

南晶电子