丝印：B1375；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector Metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012

文件：1.0731 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon PNP epitaxial planer type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1996 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Optimum for low-voltage operation and for converters. ● Allowing supply with the radial taping.

文件：39.39 Kbytes 页数：2 Pages

PANASONIC

松下

TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A) • Complementary to 2SD2079.

文件：207.28 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2079 • Low collector saturation voltage • High DC current gain APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

文件：128.88 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2079 • Low collector saturation voltage • High DC current gain APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

文件：154.24 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2079 • Low collector saturation voltage • High DC current gain APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

文件：213.14 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-3PML package • Complement to type 2SD2082 APPLICATIONS • For chopper regulator,DC motor driver and general purpose applications

文件：138.71 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) B • Complement to Type 2SD2082 APPLICATIONS • Designed for chopper regula

文件：133.63 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application : Chopper Regulator, DC Motor Driver and General Purpose

文件：25.87 Kbytes 页数：1 Pages

SANKEN

三垦

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) B • Complement to Type 2SD2082 APPLICATIONS • Designed for chopper regula

文件：109.49 Kbytes 页数：2 Pages

ISC

无锡固电