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2SB108040ML

SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB108040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

文件:17.84 Kbytes 页数:1 Pages

SILAN

士兰微

2SB108060ML

SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB108060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

文件:18.75 Kbytes 页数:1 Pages

SILAN

士兰微

2SB108100MA

LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB108100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera

文件:20.36 Kbytes 页数:1 Pages

SILAN

士兰微

2SB1085

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-120V(Min) • Wide Area of Safe Operation • Complement to Type 2SD1562 APPLICATIONS • Designed for low frequency power amplifier applications.

文件:128.68 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1085

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SD1562 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications

文件:93.93 Kbytes 页数:3 Pages

SAVANTIC

2SB1085

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SD1562 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications

文件:136.52 Kbytes 页数:3 Pages

ISC

无锡固电

2SB1085

丝印:C7;Package:TO-220;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件:91.07 Kbytes 页数:1 Pages

ROHM

罗姆

2SB1085

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SD1562 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications

文件:162.94 Kbytes 页数:3 Pages

JMNIC

锦美电子

2SB1085A

Epitaxial Planar PNP Silicon Transistor

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件:33.87 Kbytes 页数:1 Pages

ROHM

罗姆

2SB1085A

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SD1562A • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications

文件:162.75 Kbytes 页数:3 Pages

JMNIC

锦美电子

晶体管资料

  • 型号:

    2SB1085A

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    160V

  • 最大电流允许值:

    1.5A

  • 最大工作频率:

    50MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SB628,2SB628(A),2SB968A,2SA968B,2SA1011,2SA1332,

  • 最大耗散功率:

    20W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    160

  • htest:

    50000000

  • atest:

    1.5

  • wtest:

    20

详细参数

  • 型号:

    2SB108

  • 制造商:

    SAVANTIC

  • 制造商全称:

    Savantic, Inc.

  • 功能描述:

    Silicon PNP Power Transistors

供应商型号品牌批号封装库存备注价格
24+
TO-220FA
10000
全新
询价
ROHM/罗姆
23+
TO220
50000
全新原装正品现货,支持订货
询价
ROHM/罗姆
22+
TO-220
6000
十年配单,只做原装
询价
ROHM/罗姆
23+
TO-220
33400
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ROHM
2023+环保现货
TO220
10
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
ROHM/罗姆
24+
NA/
3560
原装现货,当天可交货,原型号开票
询价
NEC
25+
TO-TO-220
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ISC
20+
TO-126
15800
原装优势主营型号-可开原型号增税票
询价
FSC
23+
TO126
50000
全新原装正品现货,支持订货
询价
FSC
0218+
TO126
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多2SB108供应商 更新时间2025-12-21 10:20:00