Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage

文件：175.08 Kbytes 页数：4 Pages

SAVANTIC

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

文件：146.86 Kbytes 页数：4 Pages

TOSHIBA

东芝

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：A1962O；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：A1962R；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications

High-Frequecy Low-Noise Amplifier,Ultrahigh-Speed Switching Applications Features · Low noise : NF=1.5dB typ (f=1GHz). · High gain : | S2le |2=9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.

文件：129.52 Kbytes 页数：5 Pages

SANYO

三洋

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Flat DC current gain characteristics, high breakdown voltage, high fT, wide SOA, complements the 2SC5248. Applications High-voltage switching (audio output amplifier transistor, stabilized power supply tr

文件：792.14 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SC5248 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

文件：74.23 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complement to Type 2SC5248

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SC5248 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

文件：105.72 Kbytes 页数：2 Pages

ISC

无锡固电