Silicon NPN Epitaxial

Features • High voltage large current operation. VCEO = –80 V, IC = –300 mA • High fT. fT = 1.3 GHz • Small output capacitance. Cob = 2.9 pF Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switchin

文件：29.38 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 ■Features ● High collector to emitter voltage VCEO.

文件：37.2 Kbytes 页数：2 Pages

Panasonic

松下

PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

Fairchild

仙童半导体

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

文件：150.14 Kbytes 页数：2 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

文件：146.86 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications

文件：110.31 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage

文件：237.28 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications

文件：76.48 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司