Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

1. Silicon PNP Epitaxial Planar Transistor(Complement to type 2SC4512) 2. Application : Audio and General Purpose

文件：23.31 Kbytes 页数：1 Pages

SANKEN

三垦

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VcE

文件：112.56 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SC4512 APPLICATIONS • Audio and General Purpose

文件：198.04 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VcE

文件：127.51 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SC4512 APPLICATIONS • Audio and General Purpose

文件：132.27 Kbytes 页数：4 Pages

SAVANTIC

丝印：A1727；Package：SOT-428；High-voltage Switching Transistor (-400V, -0.5A)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

文件：250.04 Kbytes 页数：4 Pages

ROHM

罗姆

High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

文件：31.81 Kbytes 页数：1 Pages

ROHM

罗姆

High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

文件：31.81 Kbytes 页数：1 Pages

ROHM

罗姆

High-Speed Switching Applications

· Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Reference PDF : http://datasheet.ecgoo.net:81/2/2S/2SA1728.pdf

文件：85.09 Kbytes 页数：3 Pages

SANYO

三洋

High-Speed Switching Applications

High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Small-sized package.

文件：90.04 Kbytes 页数：3 Pages

SANYO

三洋